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2SB1386 / 2SB1412
Transistors
Low frequency transistor (-20V, -5A)
2SB1386 / 2SB1412
Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118. Dimensions (Unit : mm)
2SB1386 2SB1412
Structure Epitaxial planar type PNP silicon transistor
ROHM : MPT3 EIAJ : SC-62
(1) Base (2) Collector (3) Emitter
Abbreviated symbol: BH
Denotes hFE
ROHM : CPT3 EIAJ : SC-63
(1) Base (2) Collector (3) Emitter
Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SB1386 PC 2SB1412 Tj Tstg Symbol VCBO VCEO VEBO IC Limits -30 -20 -6 -5 -10 0.5 2 1 10 150 -55 to 150 Unit V V V A(DC) A(Pulse) 1 W W 2 W W(Tc=25C)
Collector power dissipation
Junction temperature Storage temperature
C C

1 Single pulse, Pw=10ms 2 When mounted on a 40x40x0.7 mm ceramic board.
Rev.B
1/4
2SB1386 / 2SB1412
Transistors
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Symbol BVCBO Min. -30 -20 -6 - - - 82 - - Typ. - - - - - 0.35 - 120 60 Max. - - - -0.5 -0.5 -1.0 390 - - Unit V V V IC= -50A IC= -1mA IE= -50A VCB= -20V VEB= -5V IC/IB= -4A/ -0.1A VCE= -2V, IC= -0.5A VCE= -6V, IE=50mA, f=100MHz VCB= -20V, IE=0A, f=1MHz Conditions
Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance BVEBO ICBO IEBO VCE(sat) hFE fT Cob
A A
V - MHz pF

Measured using pulse current.
Packaging specifications and hFE
Package Code Type 2SB1386 2SB1412 hFE PQR PQR - Basic ordering unit (pieces) Taping T100 1000 TL 2500 -
hFE values are classified as follows :
Item hFE P 82 to 180 Q 120 to 270 R 180 to 390
Rev.B
2/4
2SB1386 / 2SB1412
Transistors
Electrical characteristic curves
-10 -5
VCE= -2V
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
DC CURRENT GAIN : hFE
-2 -1 -500m -200m -100m -50m -20m -10m -5m -2m -1m
Ta=100C 25C -25C
-5 -50mA -45mA -40mA -4 -35mA
Ta=25C mA -30 A -25m -20mA
5k 2k 1k 500 200 100 50 20 10
Ta=25C
-15mA -3 -10mA -2 -5mA -1
IB=0A
VCE= -5V
-2V -1V
0
-0.2
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4
0
0
-0.4
-0.8
-1.2
-1.6
-2.0
5 -1m -2m -5m -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 COLLECTOR CURRENT : IC (A)
-5 -10
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1
Grounded emitter propagation characteristics
Fig.2
Grounded emitter output characteristics
Fig.3
DC current gain vs. collector current ( )
VCE= -1V
DC CURRENT GAIN : hFE
VCE= -2V
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
5k 2k
DC CURRENT GAIN : hFE
5k 2k 1k 500 200 100 50 20 10
-5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02
Ta=25C
1k 500 200 100 50 20 10
-1m -2m -5m -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2
Ta=100C 25C -25C
Ta=100C 25C -25C
IC/IB=50/1 40/1 /1 30/1 10/1
5
-5 -10
-1m -2m -5m -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2
5
-5 -10
-0.01 -2m -5m -0.0- -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2
-5 -10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current ( )
Fig.5 DC current gain vs. collector current ( )
Fig.6
Collector-emitter saturation voltage vs. collector current ( )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
-5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 Ta=100C
lC/lB=10
-5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02
lC/lB=30
-5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 Ta=100C
lC/lB=40
-25C
25C
Ta=100C 25C
-25C
25C -25C
-0.01 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2
COLLECTOR CURRENT : IC (A)
-5 -10
-0.01 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2
COLLECTOR CURRENT : IC (A)
-5 -10
-0.01 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2
COLLECTOR CURRENT : IC (A)
-5 -10
Fig.7
Collector-emitter saturation voltage vs. collector current ( )
Fig.8
Collector-emitter saturation voltage vs. collector current (
)
Fig.9 Collector-emitter saturation voltage vs. collector current (
)
Rev.B
3/4
2SB1386 / 2SB1412
Transistors
-5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10
1 000
TRANSEITION FREQUENCY : fT (MHz)
1000 500
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
lC/lB=50
-25C 25C Ta=100C
500 200 100 50 20 10 5 2 1 1 2 5 10 20
Ta=25C VCE= -6V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Ta=25C f=1MHz IE=0A
200 100 50
20 10 -0.1 -0.2 -0.5 -1
50 100 200
500 1000
-2
-5 -10 -20
-50
COLLECTOR CURRENT : IC (A)
EMITTER CURRENT : IE (mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.10 Collector-emitter saturation voltage vs. collector current ( )
Fig.11 Gain bandwidth product vs. emitter current
Fig.12 Collector output capacitance vs. collector-base voltage
EMITTER INTPUT CAPACITANCE : Cib (pF)
1000 500
COLLECTOR CURRENT : IC (A)
Ta=25C f=1MHz IC=0A
100 50 20 10
Ta=25C Single nonrepetitive pulse
Pw
Pw
200 100 50
5 2 1 500m 200m 100m 50m 20m 10m
=1 0m s
0 =1
DC
0m s
20 10 -0.1 -0.2 -0.5 -1 -2 -5 -10
0.2 0.5 1
2
5 10 20 50 100 200 500
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO EMITTER VOLTAGE : -VCE (V)
Fig.13 Emitter input capacitance vs. emitter-base voltage
Fig.14 Safe operation area F(2SB1412)
Rev.B
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0

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